奈米粒子分析

奈米粒子分析(Nanometer particle analysis)

半導體製程中,微小塵粒(particle)對於顯影製程會因為附著於晶圓上造成局部區域圖形缺陷; 當塵粒中含有金屬成分時,經熱處理過程後,更使之擴散至晶圓中,對電性造成不良的影響。
針對製程使用化學品其內含金屬塵粒種類、尺寸大小及數量分布,可進行ICPMS掃描比對分析,可有效的判定在化學品中除了離子態金屬污染之外,金屬微小奈米粒子亦為造成製程良率關鍵影響因素。
TRA data of 20 nm Fe particle 2.5 ppt vs. 5ppt

 
20 nm 2.5ppt 1 min, 1354 particles 20 nm 5ppt 1min, 2705 particles  

Analysis Results of Nano Si in H2O2
* 已回乘稀釋倍率
All the average particle size and concentration were consistent with the reference value.

Analysis Results of Nano Ti in H2O2

All the average particle size and concentration were consistent with the reference value.


Analysis Results of Nano particle RM Mixtures in UPW
Mixed Nano particle in UPW: 20nm / 30nm / 60nm Au

 
 

Mixed Nano particle in UPW: 20nm Ag / 20nm Fe

 
 

Mixed Nano particle in UPW: 50nm Si